smd type transistors 1 www.kexin.com.cn silicon pnp epitaxial 2SB1000 features low frequency amplifier. absolute maximum ratings ta = 25 parameter symbol rating unit collector to base voltage v cbo -25 v collector to emitter voltage v ceo -20 v emitter to base voltage v ebo -5 v collector current i c -1 a peak collector current i cp *-1.5 a collector power dissipation p c 1w junction temperature tj 150 storage temperature t stg -55to+150 *pw 10 ms; d 0.02. electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector to base breakdown voltage v (br)cbo i c =-10a,i e =0 -25 v collector to emitter breakdown voltage v (br)ceo i c =-1ma,r be = -20 v emitter to base breakdown voltage v (br)ebo i e =-10a,i c =0 -5 v collector cutoff current i cbo v cb =-20v,i e =0 -0.1 a emitter cutoff current i ebo v eb =-4v,i c =0 -0.1 a dc current transfer ratio * h fe v ce =-2v,i c = -0.5 a 85 240 collector to emitter saturation voltage * v ce(sat) i c =-0.8a,i b = -0.08 a -0.2 -0.3 v base to emitter saturation voltage * v be(sat) i c =-0.8a,i b = -0.08 a -0.94 -1.1 v gain bandwidth product f t v ce =-2v,i c = -0.15 a 200 mhz collector output capacitance c ob v cb =-10v,i e = 0 f=1mhz 38 pf h fe classification marking ah aj hfe 85 170 120 240
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